The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jan. 14, 2022
Intel Corporation, Santa Clara, CA (US);
Cheng-Ying Huang, Hillsboro, OR (US);
Tahir Ghani, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Harold Kennel, Portland, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Matthew Metz, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Sean Ma, Portland, OR (US);
Nicholas Minutillo, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device having a channel area including a channel III-V material, and a source area including a first portion and a second portion of the source area. The first portion of the source area includes a first III-V material, and the second portion of the source area includes a second III-V material. The channel III-V material, the first III-V material and the second III-V material may have a same lattice constant. Moreover, the first III-V material has a first bandgap, and the second III-V material has a second bandgap, the channel III-V material has a channel III-V material bandgap, where the channel material bandgap, the second bandgap, and the first bandgap form a monotonic sequence of bandgaps. Other embodiments may be described and/or claimed.