The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2023

Filed:

Jul. 16, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Ming Weng, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Chung-Shi Liu, Hsinchu, TW;

Hao-Yi Tsai, Hsinchu, TW;

Cheng-Chieh Hsieh, Tainan, TW;

Hung-Yi Kuo, Taipei, TW;

Tsung-Yuan Yu, Taipei, TW;

Hua-Kuei Lin, Hsinchu, TW;

Hsiu-Jen Lin, Hsinchu County, TW;

Ming-Che Ho, Tainan, TW;

Yu-Hsiang Hu, Hsinchu, TW;

Chewn-Pu Jou, Hsinchu, TW;

Cheng-Tse Tang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); G02B 6/42 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); G02B 6/4202 (2013.01); G02B 6/4274 (2013.01); H01L 21/7684 (2013.01); H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 2224/16055 (2013.01); H01L 2224/16112 (2013.01); H01L 2224/16148 (2013.01); H01L 2924/19033 (2013.01);
Abstract

A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.


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