The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Mar. 30, 2018
Intel Corporation, Santa Clara, CA (US);
Seung Hoon Sung, Portland, OR (US);
Dipanjan Basu, Hillsboro, OR (US);
Ashish Agrawal, Hillsboro, OR (US);
Benjamin Chu-Kung, Portland, OR (US);
Siddharth Chouksey, Portland, OR (US);
Cory C. Bomberger, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An integrated circuit structure includes: a semiconductor nanowire extending in a length direction and including a body portion; a gate dielectric surrounding the body portion; a gate electrode insulated from the body portion by the gate dielectric; a semiconductor source portion adjacent to a first side of the body portion; and a semiconductor drain portion adjacent to a second side of the body portion opposite the first side, the narrowest dimension of the second side of the body portion being smaller than the narrowest dimension of the first side. In an embodiment, the nanowire has a conical tapering. In an embodiment, the gate electrode extends along the body portion in the length direction to the source portion, but not to the drain portion. In an embodiment, the drain portion at the second side of the body portion has a lower dopant concentration than the source portion at the first side.