The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Jun. 15, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ji Cui, Bolingbrook, IL (US);
Fu-Ming Huang, Changhua County, TW;
Ting-Kui Chang, New Taipei, TW;
Tang-Kuei Chang, Tainan, TW;
Chun-Chieh Lin, Hsinchu, TW;
Wei-Wei Liang, Hsinchu, TW;
Liang-Guang Chen, Hsinchu, TW;
Kei-Wei Chen, Tainan, TW;
Hung Yen, Kaohsiung, TW;
Ting-Hsun Chang, Kaohsiung, TW;
Chi-Hsiang Shen, Tainan, TW;
Li-Chieh Wu, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.