The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2022
Filed:
Jun. 29, 2018
Intel Corporation, Santa Clara, CA (US);
Gilbert Dewey, Beaverton, OR (US);
Matthew Metz, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Sean Ma, Portland, OR (US);
Nicholas Minutillo, Beaverton, OR (US);
Cheng-Ying Huang, Hillsboro, OR (US);
Tahir Ghani, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Harold Kennel, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device including a substrate and an insulator layer above the substrate. A channel area may include an III-V material relaxed grown on the insulator layer. A source area may be above the insulator layer, in contact with the insulator layer, and adjacent to a first end of the channel area. A drain area may be above the insulator layer, in contact with the insulator layer, and adjacent to a second end of the channel area that is opposite to the first end of the channel area. The source area or the drain area may include one or more seed components including a seed material with free surface. Other embodiments may be described and/or claimed.