The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Mar. 14, 2017
Lam Research Corporation, Fremont, CA (US);
Kwame Eason, East Palo Alto, CA (US);
Dengliang Yang, Union City, CA (US);
Pilyeon Park, Santa Clara, CA (US);
Faisal Yaqoob, Fremont, CA (US);
Joon Hong Park, Dublin, CA (US);
Mark Kawaguchi, San Carlos, CA (US);
Ivelin Angelov, San Jose, CA (US);
Ji Zhu, Castro Valley, CA (US);
Hsiao-Wei Chang, Fremont, CA (US);
LAM RESEARCH CORPORATION, Fremont, CA (US);
Abstract
A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.