Fremont, CA, United States of America

Hsiao-Wei Chang

This inventor holds 3 USPTO granted patents. Top assignee: Lam Research Corporation. Active years: 2019-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiao-Wei Chang. Retrieved from https://idiyas.com/inventor/hsiao-wei-chang-6p32fv48

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.9

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2019-2022

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3 patents (USPTO):Explore Patents

Title: Hsiao-Wei Chang: Innovator in Semiconductor Technology

Introduction

Hsiao-Wei Chang is a prominent inventor based in Fremont, CA, specializing in semiconductor technology. He has made significant contributions to the field, holding a total of 3 patents that showcase his innovative approach to substrate processing and etching techniques.

Latest Patents

One of his latest patents is titled "Ultrahigh selective nitride etch to form FinFET devices." This invention describes a substrate processing system designed for selectively etching a layer on a substrate. The system includes an upper chamber region, an inductive coil, and a lower chamber region with a substrate support. A gas distribution device is strategically placed between the two chamber regions, featuring a plate with multiple holes. The design ensures a cooling plenum and a purge gas plenum that directs gas into the lower chamber, enhancing the etching process. The controller plays a crucial role by selectively supplying an etch gas mixture and striking plasma in the upper chamber to achieve precise etching.

Another notable patent is "Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching." This invention outlines methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature. The process involves alternating between etching and depositing protective films on the sidewalls until the unwanted material is completely removed. This innovative approach allows for targeted removal of material at various depths, enhancing the efficiency of the etching process.

Career Highlights

Hsiao-Wei Chang is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. His work at Lam Research has positioned him as a key player in advancing etching technologies that are critical for modern semiconductor manufacturing.

Collaborations

Throughout his career, Hsiao-Wei has collaborated with talented individuals such as Kwame Eason and Pilyeon Park. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Hsiao-Wei Chang's innovative contributions to semiconductor technology, particularly in etching processes, have established him as a significant figure in the industry. His patents reflect a commitment to advancing technology and improving manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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