Lam Research Corporation

Hsiao-Wei Chang

Mark Naoshi Kawaguchi

Pilyeon Park

Kwame Eason

Seung-Ho Park

Ji Zhu

Ivelin A Angelov

Dengliang Yang

Joon Hong Park

Faisal Yaqoob

A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

Ultrahigh selective nitride etch to form FinFET devices

Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.

Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching

High aspect ratio selective lateral etch using cyclic passivation and etching

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Hsiao-Wei Chang