The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Sep. 14, 2018
Intel Corporation, Santa Clara, CA (US);
Glenn Glass, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Cory Bomberger, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Siddharth Chouksey, Portland, OR (US);
Seung Hoon Sung, Portland, OR (US);
Biswajeet Guha, Hillsboro, OR (US);
Ashish Agrawal, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A semiconductor structure has a substrate including silicon and a layer of relaxed buffer material on the substrate with a thickness no greater than 300 nm. The buffer material comprises silicon and germanium with a germanium concentration from 20 to 45 atomic percent. A source and a drain are on top of the buffer material. A body extends between the source and drain, where the body is monocrystalline semiconductor material comprising silicon and germanium with a germanium concentration of at least 30 atomic percent. A gate structure is wrapped around the body.