The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Nov. 11, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jung Wei Cheng, Hsinchu, TW;

Hai-Ming Chen, Kaohsiung, TW;

Chien-Hsun Lee, Chu-tung Town, TW;

Hao-Cheng Hou, Hsinchu, TW;

Hung-Jen Lin, Tainan, TW;

Chun-Chih Chuang, Hsinchu, TW;

Ming-Che Liu, Hsinchu, TW;

Tsung-Ding Wang, Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 25/10 (2006.01); H01L 21/3205 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/31 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32051 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 24/09 (2013.01); H01L 25/105 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03502 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/0812 (2013.01); H01L 2224/0903 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2225/00 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18162 (2013.01);
Abstract

Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer. The patterned first photoresist layer is used to form a first opening in an interconnect structure. The patterned first photoresist is removed, and a second photoresist layer is formed over the interconnect structure and in the first opening. The second photoresist layer is patterned to form a second opening over the interconnect structure in the first opening. The second opening is narrower than the first opening. At least one metal layer is plated through the patterned second photoresist layer to form the connector.


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