The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Sep. 17, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Weiming Chris Chen, Taipei, TW;

Chi-Hsi Wu, Hsinchu, TW;

Chih-Wei Wu, Yilan County, TW;

Kuo-Chiang Ting, Hsinchu, TW;

Szu-Wei Lu, Hsinchu, TW;

Shang-Yun Hou, Hsinchu, TW;

Ying-Ching Shih, Hsinchu, TW;

Hsien-Ju Tsou, Taipei, TW;

Cheng-Chieh Li, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/32 (2006.01); H01L 25/18 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 21/82 (2006.01); H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/56 (2013.01); H01L 21/82 (2013.01); H01L 23/3675 (2013.01); H01L 23/481 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/24 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/94 (2013.01); H01L 25/50 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/32221 (2013.01); H01L 2224/73253 (2013.01);
Abstract

A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.


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