The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Jan. 12, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuan-Yu Huang, Taipei, TW;

Chih-Wei Wu, Zhuangwei Township, TW;

Li-Chung Kuo, Taipei, TW;

Long Hua Lee, Taipei, TW;

Sung-Hui Huang, Dongshan Township, TW;

Ying-Ching Shih, Hsinchu, TW;

Pai Yuan Li, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3128 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 23/3142 (2013.01); H01L 23/3157 (2013.01); H01L 23/3185 (2013.01); H01L 23/562 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/97 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/94 (2013.01); H01L 2924/10156 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3512 (2013.01);
Abstract

In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.


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