Pai Yuan Li

Title: Innovations of Pai Yuan Li

Introduction

Pai Yuan Li is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on improving the efficiency and reliability of semiconductor devices.

Latest Patents

One of his latest patents is titled "Thermal interface material having different thicknesses in packages." This invention involves a package that includes a package component, a device die bonded to the package component, a metal cap over the device die, and a thermal interface material that contacts both the device die and the metal cap. The thermal interface material consists of a first portion directly over the inner portion of the device die, and a second portion extending over a corner region of the device die. The first portion has a specific thickness, while the second portion has a greater thickness. Another significant patent is the "Method of manufacture of a semiconductor device." This method aims to prevent cracks at the corners of semiconductor dies after bonding them to other substrates. It involves forming openings adjacent to the corners of the semiconductor dies and filling these openings with a buffer material that possesses physical properties between those of the semiconductor die and an underfill material.

Career Highlights

Pai Yuan Li is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in semiconductor technology. His expertise and inventions have contributed to advancements in the industry, enhancing the performance and durability of semiconductor devices.

Collaborations

He has collaborated with notable colleagues, including Sung-Hui Huang and Kuan-Yu Huang, who have also contributed to the field of semiconductor technology.

Conclusion

Pai Yuan Li's innovative work in semiconductor technology, particularly through his recent patents, showcases his commitment to advancing the industry. His contributions are vital for the ongoing development of reliable and efficient semiconductor devices.