The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Aug. 08, 2018
Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);
Dow Global Technologies Llc, Midland, MI (US);
Bainian Qian, Newark, DE (US);
Fengji Yeh, Hsinchu, TW;
Te-Chun Wang, Taipei, TW;
Sheng-Huan Tseng, Hsinchu, TW;
Kevin Wen-Huan Tung, Taichung, TW;
Marty W. DeGroot, Middletown, DE (US);
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, I, Newark, DE (US);
Abstract
The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.