The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Sep. 10, 2018
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Jun Liu, Hubei, CN;
Zongliang Huo, Hubei, CN;
Li Hong Xiao, Hubei, CN;
Zhenyu Lu, Hubei, CN;
Qian Tao, Hubei, CN;
Yushi Hu, Hubei, CN;
Sizhe Li, Hubei, CN;
Zhao Hui Tang, Hubei, CN;
Yu Ting Zhou, Hubei, CN;
Zhaosong Li, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate and a multiple-stack staircase structure. The multiple-stack staircase structure can include a plurality of staircase structures stacked over the substrate. Each one of the plurality of staircase structures can include a plurality of conductor layers each between two insulating layers. The memory device can also include a filling structure over the multiple-stack staircase structure, a semiconductor channel extending through the multiple-stack staircase structure, and a supporting pillar extending through the multiple-stack staircase structure and the filling structure. The semiconductor channel can include unaligned sidewall surfaces, and the supporting pillar can include aligned sidewall surfaces.