The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Sep. 12, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Chih Huang, Hsinchu, TW;

Chi-Hui Lai, Hsinchu, TW;

Ban-Li Wu, Hsinchu, TW;

Ying-Cheng Tseng, Tainan, TW;

Ting-Ting Kuo, Hsinchu, TW;

Chih-Hsuan Tai, Taipei, TW;

Hao-Yi Tsai, Hsinchu, TW;

Chuei-Tang Wang, Taichung, TW;

Chung-Shi Liu, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Chiahung Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01); H01L 23/00 (2006.01); H01G 4/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 25/162 (2013.01); H01L 21/4857 (2013.01); H01L 21/50 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 25/16 (2013.01); H01G 4/00 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/0657 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16265 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19104 (2013.01); H01L 2924/19105 (2013.01);
Abstract

A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.


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