The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Nov. 21, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ru-Gun Liu, Hsinchu County, TW;
Cheng-Hsiung Tsai, Miaoli County, TW;
Chung-Ju Lee, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Chia-Ying Lee, New Taipei, TW;
Jyu-Horng Shieh, Hsin-Chu, TW;
Ken-Hsien Hsieh, Taipei, TW;
Ming-Feng Shieh, Tainan County, TW;
Shau-Lin Shue, Hsinchu, TW;
Shih-Ming Chang, Hsin-Chu, TW;
Tien-I Bao, Taoyuan County, TW;
Tsai-Sheng Gau, HsinChu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method includes forming a first layer on a substrate; forming a first plurality of trenches in the first layer by a first patterning process; and forming a second plurality of trenches in the first layer by second patterning process, wherein a first trench of the second plurality merges with two trenches of the first plurality to form a continuous trench. The method further includes forming spacer features on sidewalls of the first and second pluralities of trenches. The spacer features have a thickness. A width of the first trench is equal to or less than twice the thickness of the spacer features thereby the spacer features merge inside the first trench.