The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Feb. 27, 2018
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Kazunori Shinoda, Tokyo, JP;
Naoyuki Kofuji, Tokyo, JP;
Hiroyuki Kobayashi, Tokyo, JP;
Nobuya Miyoshi, Tokyo, JP;
Kohei Kawamura, Tokyo, JP;
Masaru Izawa, Tokyo, JP;
Kenji Ishikawa, Nagoya, JP;
Masaru Hori, Nagoya, JP;
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Abstract
In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.