The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Sep. 10, 2015
Lam Research Corporation, Fremont, CA (US);
Ramesh Chandrasekharan, Portland, OR (US);
Saangrut Sangplung, Sherwood, OR (US);
Shankar Swaminathan, Beaverton, OR (US);
Frank Pasquale, Tualatin, OR (US);
Hu Kang, Tualatin, OR (US);
Adrien LaVoie, Newberg, OR (US);
Edward Augustyniak, Tualatin, OR (US);
Yukinori Sakiyama, West Linn, OR (US);
Chloe Baldasseroni, Portland, OR (US);
Seshasayee Varadarajan, Lake Oswego, OR (US);
Basha Sajjad, Pleasanton, CA (US);
Jennifer L. Petraglia, Portland, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.