The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Dec. 30, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jeng-Shyan Lin, Tainan, TW;

Shu-Ting Tsai, Kaohsiung, TW;

Dun-Nian Yaung, Taipei, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Feng-Chi Hung, Chu-Bei, TW;

Shih Pei Chou, Tainan, TW;

Min-Feng Kao, Chiayi, TW;

Szu-Ying Chen, Toufen Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 21/768 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 24/09 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14636 (2013.01); H01L 21/30625 (2013.01); H01L 21/76805 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 24/92 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80894 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/9212 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/13056 (2013.01); H01L 2924/1431 (2013.01);
Abstract

An apparatus comprises a first semiconductor chip including a first substrate, a plurality of first inter-metal dielectric layers and a plurality of first metal lines, a second semiconductor chip having a surface in contact with a surface of the first semiconductor chip, wherein the second semiconductor chip comprises a second substrate, a plurality of second inter-metal dielectric layers and a plurality of second metal lines and a conductive plug coupled between the first metal lines and the second metal lines, wherein the conductive plug comprises a first portion over a first side of a hard mask layer and a second portion over a second side of the hard mask layer, wherein the hard mask layer is a ring-shaped layer, and wherein the conductive plug is formed in a center opening of the ring-shaped layer.


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