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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10158072 B1

PDFFull Text
Date of Patent:
Dec. 18, 2018

Filed:

Jul. 28, 2017

Step height reduction of memory element

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jen-Sheng Yang, Keelung, TW;

Wen-Ting Chu, Kaohsiung, TW;

Chih-Yang Chang, Changhua County, TW;

Chin-Chieh Yang, New Taipei, TW;

Kuo-Chi Tu, Hsinchu, TW;

Sheng-Hung Shih, Hsinchu, TW;

Yu-Wen Liao, New Taipei, TW;

Hsia-Wei Chen, Taipei, TW;

I-Ching Chen, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 27/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 21/76802 (2013.01); H01L 21/76819 (2013.01); H01L 21/76837 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 21/76832 (2013.01); H01L 21/76835 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 45/08 (2013.01); H01L 45/145 (2013.01); H01L 45/1616 (2013.01);
Abstract

A semiconductor device includes an inter-metal dielectric layer, a memory cell, a transistor and a dielectric layer. The memory cell includes a metal-insulator-metal (MIM) structure over a top surface of the inter-metal dielectric layer. The transistor underlies the inter-metal dielectric layer. The dielectric layer extends over the transistor and along the top surface of the inter-metal dielectric layer. The dielectric layer is separated from the MIM structure.

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