The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Dec. 22, 2017
Applicants:

Nippon Micrometal Corporation, Iruma-shi, Saitama, JP;

Nippon Steel & Sumikin Materials Co., Ltd., Tokyo, JP;

Inventors:

Daizo Oda, Saitama, JP;

Motoki Eto, Saitama, JP;

Kazuyuki Saito, Saitama, JP;

Teruo Haibara, Saitama, JP;

Ryo Oishi, Saitama, JP;

Takashi Yamada, Saitama, JP;

Tomohiro Uno, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); C22C 9/00 (2006.01); C22C 5/04 (2006.01); B32B 15/00 (2006.01); C22C 9/06 (2006.01);
U.S. Cl.
CPC ...
H01L 24/45 (2013.01); B32B 15/00 (2013.01); C22C 5/04 (2013.01); C22C 9/00 (2013.01); C22C 9/06 (2013.01); H01L 24/43 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/4312 (2013.01); H01L 2224/4321 (2013.01); H01L 2224/43125 (2013.01); H01L 2224/43825 (2013.01); H01L 2224/43826 (2013.01); H01L 2224/43827 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/43986 (2013.01); H01L 2224/45 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45105 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45639 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45655 (2013.01); H01L 2224/45657 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/45669 (2013.01); H01L 2224/45671 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48507 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/85045 (2013.01); H01L 2224/85065 (2013.01); H01L 2224/85075 (2013.01); H01L 2224/85439 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1576 (2013.01); H01L 2924/181 (2013.01);
Abstract

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.


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