Tianjin, China

Zhigang Bai

This inventor holds 29 USPTO granted patents and 12 published patent applications, primarily in Semiconductor Packaging. Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc., Nxp B.v.. Active years: 2011-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhigang Bai. Retrieved from https://idiyas.com/inventor/zhigang-bai-wga637d0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 29 

% Patents Active = 82.8

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 83(Granted Patents)


Location History:

  • Tiianjin, CN (2016)
  • Tianjin, CN (2011 - 2022)

Company Filing History:


Years Active: 2011-2022

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Areas of Expertise:
IC Packages
Lead Frame
Semiconductor Device
Pressure Sensor
QFN Package
QFP Device
Die Edge Seal
Bond Wire
Webbing Between Leads
Thin Package
Stackable Packaging
29 patents (USPTO):Explore Patents

Title: Zhigang Bai - Innovator from Tianjin, China

Introduction: Zhigang Bai is a renowned inventor hailing from Tianjin, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Zhigang Bai holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for the future.

Career Highlights: With a career spanning over two decades, Zhigang Bai has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries worldwide.

Collaborations: Throughout his career, Zhigang Bai has collaborated with top scientists, engineers, and researchers, fostering a culture of innovation and knowledge-sharing to drive progress in the tech sector.

Conclusion: Zhigang Bai's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and entrepreneurs in Tianjin and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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