Kanagawa, Japan

Yuri Masuoka


Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2006-2010

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5 patents (USPTO):Explore Patents

Title: Innovations of Yuri Masuoka

Introduction

Yuri Masuoka is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor device that features high dielectric constant layers of different thicknesses. This innovative device includes a silicon substrate, an N-type MOSFET with a first high dielectric constant film, and a polycrystalline silicon film. Additionally, it incorporates a P-type MOSFET with a second high dielectric constant film, which is designed to be thinner than the first. The films contain elements such as Hafnium (Hf) and Zirconium (Zr), enhancing the device's performance.

Another notable patent focuses on adjusting the threshold voltage of a field effect transistor. This adjustment is achieved with a smaller dose of an impurity compared to conventional methods. The semiconductor device comprises a silicon substrate and a P-type MOSFET that includes a SiON film. The interface between the polycrystalline silicon film and the SiON film is optimized with metals like Hf, Zr, Al, and others, ensuring precise control over the device's electrical characteristics.

Career Highlights

Yuri Masuoka has worked with notable companies such as NEC Electronics Corporation and NEC Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Yuri has collaborated with several professionals in his field, including Naohiko Kimizuka and Kiyotaka Imai. These collaborations have fostered a rich exchange of ideas and advancements in semiconductor research.

Conclusion

Yuri Masuoka's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

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