The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2010
Filed:
Aug. 25, 2005
Naohiko Kimizuka, Kanagawa, JP;
Kiyotaka Imai, Kanagawa, JP;
Yuri Masuoka, Kanagawa, JP;
Toshiyuki Iwamoto, Tokyo, JP;
Naohiko Kimizuka, Kanagawa, JP;
Kiyotaka Imai, Kanagawa, JP;
Yuri Masuoka, Kanagawa, JP;
Toshiyuki Iwamoto, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
NEC Corporation, Tokyo, JP;
Abstract
Threshold voltage of a field effect transistor is successfully adjusted with a smaller dose of an impurity, as compared with a conventional adjustment of the threshold voltage only by doping an impurity into the channel region. A semiconductor devicehas a silicon substrateand a P-type MOSFETcomprising a SiON filmformed on the silicon substrate, and a polycrystalline silicon filmAny one of, or two or more of metals selected from the group consisting of Hf, Zr, Al, La, Pr, Y, Ti, Ta and W are allowed to reside at the interface 115 between the polycrystalline silicon filmand the SiON film, and concentration of the metal(s) at the interfaceis adjusted to 5×10atoms/cmor more and less than 1.4×10atoms/cm.