The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Mar. 03, 2004
Yuri Masuoka, Kanagawa, JP;
Naohiko Kimizuka, Kanagawa, JP;
Yuri Masuoka, Kanagawa, JP;
Naohiko Kimizuka, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A technology of restraining junction leakage in a semiconductor device is to be provided. There is provided a semiconductor device provided with a semiconductor substrate, a gate electrodeformed on the semiconductor substrate, and a source/drain region formed beside the gate electrode, wherein the source/drain regioncomprises a first impurity diffusion region including a first P-type impurity and located in the proximity of a surface of the semiconductor substrate, and a second P-type impurity diffusion region located below the first impurity diffusion region and including a second P-type impurity having a smaller diffusion coefficient in the semiconductor substrate than the first P-type impurity.