The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
May. 16, 2005
Naohiko Kimizuka, Kanagawa, JP;
Kiyotaka Imai, Kanagawa, JP;
Yuri Masuoka, Kanagawa, JP;
Toshiyuki Iwamoto, Tokyo, JP;
Motofumi Saitoh, Tokyo, JP;
Hirohito Watanabe, Tokyo, JP;
Masayuki Terai, Tokyo, JP;
Naohiko Kimizuka, Kanagawa, JP;
Kiyotaka Imai, Kanagawa, JP;
Yuri Masuoka, Kanagawa, JP;
Toshiyuki Iwamoto, Tokyo, JP;
Motofumi Saitoh, Tokyo, JP;
Hirohito Watanabe, Tokyo, JP;
Masayuki Terai, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor deviceincludes a silicon substrate, an N-type MOSFETincluding a first high dielectric constant filmand a polycrystalline silicon filmon the silicon substrateand a P-type MOSFETincluding a second high dielectric constant filmand a polycrystalline silicon filmjuxtaposed to N-type MOSFETon the silicon substrateThe second high dielectric constant filmis formed to have the film thickness thinner than the film thickness of the first high dielectric constant filmThe first high dielectric constant filmand the second high dielectric constant filmcontains one or more element(s) selected from Hf and Zr.