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For the Inventor, By the Inventor

Greer, SC, United States of America

Yuri Freeman

This inventor holds 16 USPTO granted patents and 3 published patent applications and 3 EPO patents, primarily in Electrolytic Capacitors. Top assignee: Kemet Electronics Corporation. Active years: 2010-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuri Freeman. Retrieved from https://idiyas.com/inventor/yuri-freeman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 81.3

 

Average Co-Inventor Count = 3.2

ph-index = 7

Forward Citations = 162(Granted Patents)


Location History:

  • Greer, SC (US) (2010 - 2019)
  • Simpsonville, SC (US) (2015 - 2024)

Company Filing History:

goldMedal16 out of 302 
 
Kemet Electronics Corporation
 patents

Years Active: 2010-2024

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Areas of Expertise:
Electrolytic Capacitors
Anode Lead Wire
Moisture Utilization
Hermetically Sealed
Polymer Cathode
High Voltage
Volumetric Efficiency
Screening Method
Thermal Stability
Tantalum Capacitor
D.C. Leakage
Performance Improvement
16 patents (USPTO):Explore Patents
1. 11929215 - Wire to anode connection (2024-03-12),
2. 11120949 - Wire to anode connection (2021-09-14),
3. 10777362 - Method to reduce anode lead wire embrittlement in capacitors (2020-09-15),
4. 10290429 - Wire to anode connection (2019-05-14),
5. RE47373 - Utilization of moisture in hermetically sealed solid electrolytic capacitors and capacitors made thereof (2019-04-29),
6. 10062519 - Tantalum capacitor with polymer cathode (2018-08-28),
7. 9147530 - Hermetically sealed polymer capacitors with high stability at elevated temperatures (2015-09-29),
8. 8441265 - Apparatus and method for screening electrolytic capacitors (2013-05-14),
9. 8379371 - Utilization of moisture in hermetically sealed solid electrolytic capacitor and capacitors made thereof (2013-02-19),
10. 8349030 - Method for making anodes for high voltage electrolytic capacitors with high volumetric efficiency and stable D.C. leakage (2013-01-08),
11. 8325465 - NbO capacitors with improved performance and higher working voltages (2012-12-04),
12. 8323361 - High voltage and high efficiency polymer electrolytic capacitors (2012-12-04),
13. 8310815 - High voltage and high efficiency polymer electrolytic capacitors (2012-11-13),
14. 8308825 - High volumetric efficiency anodes for electrolytic capacitors (2012-11-13),
15. 7731893 - Method for making anodes for electrolytic capacitor with high volumetric efficiency (2010-06-08),

Title: The Innovative Journey of Yuri Freeman

Introduction: Yuri Freeman, a visionary inventor based in Greer, South Carolina, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Yuri Freeman's latest patents include a cutting-edge virtual reality headset that revolutionizes the gaming industry, a smart home automation system that enhances convenience and security, and a sustainable energy solution for rural communities.

Career Highlights: With a background in engineering and a passion for innovation, Yuri Freeman has successfully brought numerous ideas to life through his inventive spirit. His career highlights include receiving multiple awards for his contributions to the tech industry and being recognized as a pioneer in the field of wearable technology.

Collaborations: Yuri Freeman has collaborated with leading tech companies, research institutions, and universities to further develop his inventions and bring them to the market. His collaborative efforts have resulted in groundbreaking products that have improved the lives of many.

Conclusion: Yuri Freeman's dedication to innovation and his relentless pursuit of technological advancement have solidified his reputation as a prominent inventor in the industry. His passion for creating solutions that make a difference continues to inspire others to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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