The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Sep. 14, 2015
Applicant:
Kemet Electronics Corporation, Simpsonville, SC (US);
Inventors:
Yuri Freeman, Simpsonville, SC (US);
Steven C. Hussey, Simpsonville, SC (US);
Jimmy Dale Cisson, Simpsonville, SC (US);
Philip M. Lessner, Simpsonville, SC (US);
Assignee:
KEMET Electronics Corporation, Simpsonville, SC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/012 (2006.01); H01G 9/052 (2006.01); H01G 13/00 (2013.01); H01G 9/10 (2006.01); H01G 9/00 (2006.01); H01G 9/042 (2006.01); H01G 9/15 (2006.01); H01G 9/14 (2006.01);
U.S. Cl.
CPC ...
H01G 9/012 (2013.01); H01G 9/0036 (2013.01); H01G 9/0425 (2013.01); H01G 9/052 (2013.01); H01G 9/10 (2013.01); H01G 9/15 (2013.01); H01G 13/003 (2013.01); H01G 9/14 (2013.01);
Abstract
An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 μC/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.