IDiyas

For the Inventor, By the Inventor

Taipei, Taiwan

Yung-Chun Li

USPTO Granted Patents = 22 

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Hsinchu, TW (2017)
  • New Taipei, TW (2015 - 2024)

Company Filing History:

goldMedal22 out of 3,595 
 
Macronix International Co., Ltd.
 patents

Years Active: 2015-2025

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22 patents (USPTO):
1. 12482505 - Page buffer circuit and operating method thereof adapted for page read device (2025-11-25),
2. 12314261 - Filtered search method (2025-05-27),
3. 12260130 - Memory device for computing in-memory (2025-03-25),
4. 12169702 - In-memory computing method and in-memory computing apparatus (2024-12-17),
5. 12020747 - Non-volatile memory and programming method thereof (2024-06-25),
6. 11966628 - Memory device and operating method thereof (2024-04-23),
7. 11955199 - Memory chip, memory device and operation method thereof (2024-04-09),
8. 11914887 - Storage device and data accessing method using multi-level cell (2024-02-27),
9. 11664058 - Memory device and operation method thereof (2023-05-30),
10. 11663074 - Determining read voltages for memory systems (2023-05-30),
11. 11656988 - Memory device and operation method thereof (2023-05-23),
12. 11386972 - Determining read voltages for memory systems with machine learning (2022-07-12),
13. 11222693 - Data management method for memory and memory apparatus using the same (2022-01-11),
14. 11010244 - Memory data management method (2021-05-18),
15. 10748605 - Memory device and programming method of multi-level cell (MLC) (2020-08-18),

Title: Yung-Chun Li: Innovator in Memory Device Technology

Introduction: Yung-Chun Li is a prominent inventor based in New Taipei, Taiwan. With an impressive portfolio of 20 patents, he has made significant contributions to the field of memory devices and in-memory computing. His work is crucial to advancements in memory technology, particularly within the realm of computing efficiency.

Latest Patents: Among Yung-Chun Li's latest patents are two notable innovations. The first is a "Memory device for computing in-memory," which is applicable to a 3D AND-type flash memory. This device includes a memory array that features input word line pairs and a signal processing circuit designed to enhance computational capabilities. The second patent relates to an "In-memory computing method and in-memory computing apparatus," which is tailored for multiply-accumulate (MAC) operations on memory by a processor. This method involves a unique pre-processing operation that optimizes the handling of input and weight data for improved performance.

Career Highlights: Yung-Chun Li is associated with Macronix International Co., Ltd., a recognized entity in the semiconductor industry. His innovative spirit has been instrumental in pushing the boundaries of memory technology, allowing for more efficient data processing and storage solutions.

Collaborations: Throughout his career, Yung-Chun Li has worked alongside talented colleagues, including Yu-Ming Chang and Hsiang-Pang Li. Their collaborative efforts in research and development have led to groundbreaking advancements in memory device technology.

Conclusion: Yung-Chun Li's contributions to the field of memory devices exemplify the spirit of innovation that drives technological progress. His patents not only reflect his expertise but also pave the way for future advancements in computing technology. As he continues to develop new solutions in this ever-evolving field, Yung-Chun Li remains a key figure to watch in the world of technology innovation.

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