Yun-Seung Shin

This inventor holds 26 USPTO granted patents, primarily in Magnetic Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1990-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yun-Seung Shin. Retrieved from https://idiyas.com/inventor/yun-seung-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 73.1

Average Co-Inventor Count = 2.5

ph-index = 9

Forward Citations = 270(Granted Patents)

Location History:

Suwon-city, KR (1993)
Kyungki-do, KR (1998)
Seoul, KR (1990 - 2011)

Company Filing History:

26 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 1990-2011

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Areas of Expertise:

Magnetic Memory

Phase Change Memory

Magnetoresistive RAM

Nonvolatile Memory

Integrated Circuit

Digital-to-Analog Converter

Semiconductor Fabrication

Capacitor Structures

Flash Memory

Static Random Access Memory

BiCMOS Technology

Voltage Generator

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8043869 - Magnetic memory device and method of fabricating the same (2011-10-25),

2. 7994493 - Phase change memory devices employing cell diodes and methods of fabricating the same (2011-08-09),

3. 7952918 - Method of operating a magnetoresistive RAM (2011-05-31),

4. 7851878 - Magnetic memory device and method of fabricating the same (2010-12-14),

5. 7791929 - Magnetoresistive RAM and associated methods (2010-09-07),

6. 7605473 - Nonvolatile memory devices (2009-10-20),

7. 7582941 - Magnetic memory device and method of fabricating the same (2009-09-01),

8. 7573411 - Digital-to-analog converter, display panel driver having the same, and digital-to-analog converting method (2009-08-11),

9. 7427531 - Phase change memory devices employing cell diodes and methods of fabricating the same (2008-09-23),

10. 6816429 - Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same (2004-11-09),

11. 6490223 - Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same (2002-12-03),

12. 6487117 - Method for programming NAND-type flash memory device using bulk bias (2002-11-26),

13. 6026039 - Parallel test circuit for semiconductor memory (2000-02-15),

14. 5960293 - Methods including oxide masks for fabricating capacitor structures for (1999-09-28),

15. 5940716 - Methods of forming trench isolation regions using repatterned trench (1999-08-17),

Title: **Yun-Seung Shin: Innovator in Magnetic and Phase Change Memory Technologies**

Introduction

Yun-Seung Shin is a prominent inventor based in Seoul, South Korea, known for his significant contributions to the field of memory devices. With a remarkable portfolio of 26 patents, Shin’s work primarily focuses on advanced magnetic memory technologies and phase change memory devices. His innovations have the potential to revolutionize data storage solutions in various applications.

Latest Patents

Among his latest patents, Yun-Seung Shin has developed a groundbreaking magnetic memory device and a method of fabricating the same. This magnetic memory device features a common line connected in parallel to a first write-in diode, a readout diode, and a second write-in diode. It also incorporates a magnetic tunnel junction structure connected to the readout diode, along with multiple conductors that enhance its functionality.

Furthermore, Shin's work includes advancements in phase change memory devices. These devices utilize a semiconductor substrate with multiple parallel word lines that differ in conductivity type. His design ensures a robust structure through the stacking of semiconductor patterns, all while optimizing the use of phase change materials that are electrically connected to improve storage capabilities.

Career Highlights

Yun-Seung Shin’s career is marked by his affiliation with Samsung Electronics Co., Ltd., where he has made significant strides in research and development. His expertise has contributed to the advancement of memory technologies that are crucial for modern computing needs. Shin’s patents reflect his innovative spirit and commitment to enhancing memory device performance.

Collaborations

Throughout his career, Yun-Seung Shin has collaborated with esteemed colleagues, including Choong-Keun Kwak and Woo-Yeong Cho. These collaborations have led to significant advancements in the projects they undertook, emphasizing the importance of teamwork in driving innovation within the tech industry.

Conclusion

Yun-Seung Shin’s impactful work in the field of magnetic and phase change memory devices underlines his status as a leading inventor. With numerous patents to his name, his contributions will continue to shape the future of data storage technology. His collaborations with talented coworkers further bolster the innovative culture at Samsung Electronics, paving the way for future breakthroughs.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]