Yukihito Oowaki

This inventor holds 79 USPTO granted patents, primarily in Ferroelectric Memory (CPC class 3652). Top assignees: Kabushiki Kaisha Toshiba, Toshiba Corporation. Active years: 1989-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yukihito Oowaki. Retrieved from https://idiyas.com/inventor/yukihito-oowaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 79

% Patents Active = 83.5

Average Co-Inventor Count = 2.6

ph-index = 19

Forward Citations = 1,391(Granted Patents)

Forward Citations (Not Self Cited) = 1,381(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kanagawa, JP (2000 - 2002)
Yokohama, JP (1989 - 2009)
Kanagawa-ken, JP (1996 - 2012)

Company Filing History:

77 out of 53,262

Kabushiki Kaisha Toshiba

Years Active: 1989-2012

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Areas of Expertise:

Ferroelectric Memory

Semiconductor Device

MIS Transistor

Random Access Memory

Memory Architecture

Integrated Circuit

Clock Control Circuit

CFRAM

Dynamic RAM

Data Read/Write

Testing Method

Electronic Circuit

79 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8269346 - Semiconductor device and method of designing a wiring of a semiconductor device (2012-09-18),

2. 7487370 - Semiconductor device and system (2009-02-03),

3. 7303965 - MIS transistor and method for producing same (2007-12-04),

4. 7295456 - Chain ferroelectric random access memory (CFRAM) having an intrinsic transistor connected in parallel with a ferroelectric capacitor (2007-11-13),

5. 7236035 - Semiconductor device adapted to minimize clock skew (2007-06-26),

6. 7057917 - Ferroelectric memory with an intrinsic access transistor coupled to a capacitor (2006-06-06),

7. 6993691 - Series connected TC unit type ferroelectric RAM and test method thereof (2006-01-31),

8. 6906944 - Ferroelectric memory (2005-06-14),

9. 6690047 - MIS transistor having a large driving current and method for producing the same (2004-02-10),

10. 6671200 - Ferroelectric random access memory with isolation transistors coupled between a sense amplifier and an equalization circuit (2003-12-30),

11. 6643162 - Ferroelectric memory having a device responsive to current lowering (2003-11-04),

12. 6611450 - Ferroelectric random access memory (2003-08-26),

13. 6552922 - Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pair (2003-04-22),

14. 6545323 - Semiconductor memory device including a pair of MOS transistors forming a detection circuit (2003-04-08),

15. 6538952 - Random access memory with divided memory banks and data read/write architecture therefor (2003-03-25),

Title: Yukihito Oowaki: Pioneering Inventor from Yokohama

Introduction: Yukihito Oowaki is a renowned inventor hailing from Yokohama, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yukihito Oowaki holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Yukihito Oowaki has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Yukihito Oowaki has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Yukihito Oowaki's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has solidified his reputation as a visionary inventor in Yokohama and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]