The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Apr. 11, 2002
Ryu Ogiwara, Yokohama, JP;
Daisaburo Takashima, Yokohama, JP;
Yukihito Oowaki, Yokohama, JP;
Katsuhiko Hoya, Yokohama, JP;
Takeshi Watanabe, Yokohama, JP;
Ryu Ogiwara, Yokohama, JP;
Daisaburo Takashima, Yokohama, JP;
Yukihito Oowaki, Yokohama, JP;
Katsuhiko Hoya, Yokohama, JP;
Takeshi Watanabe, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Potential of a word line connected to any selected one of memory cells is lowered and potential of word lines connected to non-selected memory cells are raised. The potential of the plate line is raised and lowered. The potential of the bit line is raised and lowered. After this, reading data from the memory cells after potential raising and lowering of the plate line and potential raising and lowering of the bit line have been alternately performed at least one time, thereby to determine attenuation of polarization in the ferroelectric capacitor.