The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Mar. 05, 2002
Applicant:
Inventors:
Yukihito Oowaki, Yokohama, JP;
Sumiko Doumae, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-Ku, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract
A ferroelectric random access memory is disclosed, which comprises a cell array including a plurality of memory cells each having a ferroelectric memory device and a cell selecting transistor connected in series to the ferroelectric storage device, and imprint restricting circuit configured to restrict generation of an imprint by setting a polarization amount of a ferroelectric film of the ferroelectric memory device in the memory cell to an amount smaller than a polarization amount generated at a normal write time.