Tokyo, Japan

Yuki Munetaka

USPTO Granted Patents = 4 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Tokyo, JP (2013 - 2023)
  • Higashihiroshima, JP (2024)

Company Filing History:


Years Active: 2013-2024

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4 patents (USPTO):Explore Patents

Title: Yuki Munetaka: Innovator in Semiconductor Technology

Introduction

Yuki Munetaka is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His innovative work has advanced the development of semiconductor devices, showcasing his expertise and creativity.

Latest Patents

Among his latest patents is a semiconductor memory device that features a trench gate structure and a method of forming the same. This invention includes a semiconductor substrate with a line-shaped trench, an insulating film covering the inner wall, and a first conductive member with specific configurations. Another notable patent is for a semiconductor device that comprises an active region surrounded by a device isolation region, a silicon pillar separating diffusion layers, and gate electrodes covering the silicon pillar. These inventions reflect his deep understanding of semiconductor design and functionality.

Career Highlights

Yuki Munetaka has worked with leading companies in the semiconductor industry, including Micron Technology Incorporated and Elpida Memory, Inc. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Yuki has collaborated with notable colleagues, including Kazuo Ogawa and Yoshihiro Takaishi. These partnerships have fostered innovation and have been instrumental in the development of new technologies.

Conclusion

Yuki Munetaka's contributions to semiconductor technology are noteworthy, and his patents demonstrate his innovative spirit. His work continues to influence the industry and inspire future advancements in semiconductor devices.

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