The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Mar. 16, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yuki Munetaka, Higashihiroshima, JP;

Toshiyasu Fujimoto, Higashihiroshima, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H01L 21/28088 (2013.01); H01L 29/4966 (2013.01); H10B 12/053 (2023.02);
Abstract

An apparatus includes a semiconductor substrate; a line-shaped trench in the semiconductor substrate, an inner wall of the line-shaped trench being covered with an insulating film; a first conductive member including first and second line-shaped portions, the first line-shaped portion filling a lower portion of the line-shaped trench; and line-shaped second and third conductive members extending along the inner wall of the line-shaped trench and facing each other, the line-shaped second and third conductive members having a void therebetween; wherein the second line-shaped portion of the first conductive member protrudes from a central portion of the first line-shaped portion to fill the void.


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