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Years Active: 2007-2016
Title: Yuichiro Ikeda: Innovator in Nonvolatile Memory Technology
Introduction
Yuichiro Ikeda is a prominent inventor based in Hyogo, Japan, known for his significant contributions to the field of nonvolatile memory devices. With a total of 11 patents to his name, Ikeda has made remarkable advancements in memory technology that have implications for various electronic applications.
Latest Patents
One of Ikeda's latest patents is titled "Variable resistance nonvolatile memory device and method for writing into the same." This invention outlines a method for writing into a variable resistance nonvolatile memory device, which includes a verify write operation that applies a voltage pulse to change a resistance state. The method also involves relaxing the determination condition in the verify write operation when the average number of verify write operations exceeds a predetermined threshold. Another notable patent is for a "Variable resistance nonvolatile memory device," which features a variable resistance element whose resistance state can be reversibly changed by applying electrical signals of different polarities. This device includes a current steering element that manages the flow of current based on the applied voltage polarity.
Career Highlights
Ikeda has worked with notable companies such as Panasonic Corporation and Panasonic Intellectual Property Management Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.
Collaborations
Throughout his career, Ikeda has collaborated with esteemed colleagues, including Kazuhiko Shimakawa and Ryotaro Azuma. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Yuichiro Ikeda's work in the field of nonvolatile memory technology showcases his innovative spirit and dedication to advancing electronic memory solutions. His contributions continue to influence the industry and pave the way for future developments in memory devices.