The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Sep. 07, 2011
Hiroshi Tomotani, Osaka, JP;
Kazuhiko Shimakawa, Osaka, JP;
Ryotaro Azuma, Osaka, JP;
Yoshikazu Katoh, Osaka, JP;
Yuichiro Ikeda, Hyogo, JP;
Hiroshi Tomotani, Osaka, JP;
Kazuhiko Shimakawa, Osaka, JP;
Ryotaro Azuma, Osaka, JP;
Yoshikazu Katoh, Osaka, JP;
Yuichiro Ikeda, Hyogo, JP;
Abstract
A method of inspecting a variable resistance nonvolatile memory device detecting a faulty memory cell of a memory cell array employing a current steering element, and a variable resistance nonvolatile memory device are provided. The method of inspecting a variable resistance nonvolatile memory device having a memory cell array, a memory cell selection circuit, and a read circuit includes: determining that a current steering element has a short-circuit fault when a variable resistance element is in a low resistance state and a current higher than or equal to a predetermined current passes through the current steering element, when the resistance state of the memory cell is read using a second voltage; and determining whether the variable resistance element is in the low or high resistance state, when the resistance state of the memory cell is read using a first voltage.