The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Nov. 21, 2012
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Ken Kawai, Osaka, JP;
Kazuhiko Shimakawa, Osaka, JP;
Yoshikazu Katoh, Osaka, JP;
Yuichiro Ikeda, Hyogo, JP;
Abstract
Provided is a method of writing to a variable resistance nonvolatile memory element which is capable of both improving retention characteristics and enlarging a window of operation. In the method of writing, to write '1' data (LR), first a weak HR writing process is performed in which a weak HR writing voltage pulse set for changing the variable resistance nonvolatile memory element to an intermediate resistance state is applied and, subsequently, a LR writing process is performed in which a LR writing voltage pulse set for changing the variable resistance nonvolatile memory element from the intermediate resistance state to a LR state is applied.