Hopewell Junction, NY, United States of America

Yue Tan

USPTO Granted Patents = 10 

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 141(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (2006)
  • Fishkill, NY (US) (2007 - 2012)
  • Hopewell Junction, NY (US) (2010 - 2015)

Company Filing History:


Years Active: 2006-2015

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):

Title: Innovations of Yue Tan in Semiconductor Technology

Introduction

Yue Tan is a prominent inventor based in Hopewell Junction, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. Her work focuses on enhancing the performance and scalability of fin field effect transistors.

Latest Patents

One of her latest patents is titled "Continuously scalable width and height semiconductor fins." This innovation allows for arbitrarily and continuously scalable on-currents in fin field effect transistors by providing two independent variables for the physical dimensions of semiconductor fins. The process involves forming a recessed region on a semiconductor layer over a buried insulator layer, followed by the creation of a dielectric cap layer. Disposable mandrel structures are then formed over the dielectric cap layer, with spacer structures surrounding them. Selected spacer structures can be structurally damaged during a masked ion implantation, and an etch is employed to remove these damaged structures at a greater rate than the undamaged ones. After the removal of the disposable mandrel structures, the semiconductor layer is patterned into a plurality of semiconductor fins with varying heights and widths, allowing for the formation of fin field effect transistors with different dimensions.

Another notable patent is "Body contacts for FET in SOI SRAM array." This patent describes a method for forming contact with a floating body of an FET in silicon-on-insulator (SOI) technology. The contact is made in a portion of one of the two diffusions of the FET, specifically in a section that is not immediately adjacent to the gate. This technique is particularly effective for linked body FETs, where the diffusion does not extend all the way to the buried oxide layer.

Career Highlights

Yue Tan is currently employed at International Business Machines Corporation (IBM), where she continues to innovate in semiconductor technology. Her work has significantly impacted the development of advanced electronic devices.

Collaborations

Throughout her career, Yue has collaborated with notable colleagues, including Huilong Zhu and Rajiv V Joshi. These collaborations have further enhanced her research and contributions to the field.

Conclusion

Yue Tan's innovative work in semiconductor technology, particularly in the area of fin field effect transistors, showcases her expertise and commitment to advancing the field. Her patents reflect a deep understanding of the complexities involved in semiconductor design and fabrication.

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