The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Feb. 17, 2010
Yue Tan, Hopewell Junction, NY (US);
Zhibin Ren, Hopewell Junction, NY (US);
Richard A. Wachnik, Hopewell Junction, NY (US);
Haining S. Yang, Wappingers Falls, NY (US);
Yue Tan, Hopewell Junction, NY (US);
Zhibin Ren, Hopewell Junction, NY (US);
Richard A. Wachnik, Hopewell Junction, NY (US);
Haining S. Yang, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Contact with a floating body of an FET in SOI may be formed in a portion of one of the two diffusions of the FET, wherein the portion of the diffusion (such as N−, for an NFET) which is 'sacrificed' for making the contact is a portion of the diffusion which is not immediately adjacent (or under) the gate. This works well with linked body FETs, wherein the diffusion does not extend all the way to BOX, hence the linked body (such as P−) extends under the diffusion where the contact is being made. An example showing making contact for ground to two NFETs (PG and PD) of a 6T SRAM cell is shown.