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For the Inventor, By the Inventor

Plano, TX, United States of America

Yuanning Chen

This inventor holds 17 USPTO granted patents and 2 published patent applications. Top assignees: Texas Instruments Corporation, Agere Systems Inc., Agere Systems Guardian Corp.. Active years: 2001-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuanning Chen. Retrieved from https://idiyas.com/inventor/yuanning-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 88.2

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 45(Granted Patents)


Location History:

  • Orlando, FL (US) (2001 - 2006)
  • Plano, TX (US) (2006 - 2021)

Company Filing History:

goldMedal8 out of 29,888 
 
Texas Instruments Corporation
 patents
silverMedal5 out of 2,316 
 
Agere Systems Inc.
 patents
bronzeMedal3 out of 598 
 
Agere Systems Guardian Corp.
 patents
4. 1 out of 1 
 
Microsol Technologies Inc.
 patent

Years Active: 2001-2021

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17 patents (USPTO):Explore Patents
1. 11004612 - Low temperature sub-nanometer periodic stack dielectrics (2021-05-11),
2. 9048151 - Self-powered integrated circuit with photovoltaic cell (2015-06-02),
3. 8883541 - Self-powered integrated circuit with multi-junction photovoltaic cell (2014-11-11),
4. 8552470 - Self-powered integrated circuit with multi-junction photovoltaic cell (2013-10-08),
5. 7800226 - Integrated circuit with metal silicide regions (2010-09-21),
6. 7704883 - Annealing to improve edge roughness in semiconductor technology (2010-04-27),
7. 7667275 - Using oxynitride spacer to reduce parasitic capacitance in CMOS devices (2010-02-23),
8. 7569464 - Method for manufacturing a semiconductor device having improved across chip implant uniformity (2009-08-04),
9. 7276408 - Reduction of dopant loss in a gate structure (2007-10-02),
10. 7250356 - Method for forming metal silicide regions in an integrated circuit (2007-07-31),
11. 7148153 - Process for oxide fabrication using oxidation steps below and above a threshold temperature (2006-12-12),
12. 7033897 - Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology (2006-04-25),
13. 6930006 - Electronic circuit structure with improved dielectric properties (2005-08-16),
14. 6551946 - TWO-STEP OXIDATION PROCESS FOR OXIDIZING A SILICON SUBSTRATE WHEREIN THE FIRST STEP IS CARRIED OUT AT A TEMPERATURE BELOW THE VISCOELASTIC TEMPERATURE OF SILICON DIOXIDE AND THE SECOND STEP IS CARRIED OUT AT A TEMPERATURE ABOVE THE VISCOELASTIC TEMPERATURE (2003-04-22),
15. 6541394 - Method of making a graded grown, high quality oxide layer for a semiconductor device (2003-04-01),

Title: The Innovative Journey of Yuanning Chen

Introduction: Yuanning Chen, a visionary inventor based in Plano, TX, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Yuanning Chen holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a background in computer science and engineering, Yuanning Chen has worked for leading tech companies where he honed his skills and developed a deep understanding of emerging technologies. His career highlights include spearheading projects that have revolutionized the way we interact with machines.

Collaborations: Throughout his career, Yuanning Chen has collaborated with top researchers, engineers, and developers to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Yuanning Chen's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventive spirit continues to inspire others to push the boundaries of what is possible in the ever-evolving tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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