The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2007
Filed:
Sep. 17, 2002
Yuanning Chen, Plano, TX (US);
Maxwell Walthour Lippitt, Iii, Rockwall, TX (US);
William M. Moller, Austin, TX (US);
Yuanning Chen, Plano, TX (US);
Maxwell Walthour Lippitt, III, Rockwall, TX (US);
William M. Moller, Austin, TX (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heated to form the silicide, the titanium getters silicon dioxide on the surface of the silicon region and the titanium nitride promotes the formation of a smooth surface at the interface between the silicide layer and the underlying silicon region.