Yu-Shiang Huang

Title: Innovations of Yu-Shiang Huang

Introduction

Yu-Shiang Huang is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on advanced semiconductor devices, particularly in the development of Fin field effect transistors (FINFET).

Latest Patents

One of his latest patents is a FINFET device that includes a plurality of recessed regions alternating with unrecessed regions in the channel stack. This device features a first channel structure that connects a first source region and a first drain region, incorporating alternating stacking of first and second semiconductor layers. The second semiconductor layers are narrower than the first semiconductor layers. Additionally, the second channel structure connects a second source region and a second drain region, with alternating stacking of third and fourth semiconductor layers, where the fourth layers are also narrower than the third layers. The gate structure wraps around both channel structures, enhancing device performance.

Another notable patent is a semiconductor device and method for forming the same. This device comprises a substrate, a semiconductor strip, an isolation dielectric, multiple channel layers, a gate structure, several source/drain structures, and an isolation layer. The semiconductor strip extends upwardly from the substrate and has a length that extends along a first direction. The isolation dielectric surrounds the semiconductor strip laterally. The channel layers extend in the first direction above the semiconductor strip and are arranged in a second direction that is substantially perpendicular to the substrate. The gate structure surrounds each of the channel layers, while the source/drain structures are positioned above the semiconductor strip and on either side of the channel layers. The isolation layer is interposed between the semiconductor strip and the gate structure, as well as between the semiconductor strip and each of the source/drain structures.

Career Highlights

Yu-Shiang Huang has worked at notable institutions, including National Taiwan University and Taiwan Semiconductor Manufacturing Company Limited. His experience in these organizations has significantly contributed to his expertise in semiconductor technology.

Collaborations

Throughout his career, Yu-Shiang Huang has collaborated with esteemed colleagues such as Chee-Wee Liu and Hung-Yu Yeh. Their joint efforts have further advanced the field of semiconductor innovations.

Conclusion

Yu-Shiang Huang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in