The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jul. 31, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Chung-En Tsai, Hsinchu County, TW;
Chia-Che Chung, Hsinchu, TW;
Chee-Wee Liu, Taipei, TW;
Fang-Liang Lu, New Taipei, TW;
Yu-Shiang Huang, New Taipei, TW;
Hung-Yu Yeh, Taichung, TW;
Chien-Te Tu, Hsinchu, TW;
Yi-Chun Liu, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
The present disclosure provides a semiconductor device with a plurality of semiconductor channel layers. The semiconductor channel layers include a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer. A strain in the second semiconductor layer is different from a strain in the first semiconductor layer. A gate is disposed over the plurality of semiconductor channel layers.