The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Jul. 09, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Hung-Yu Ye, Taichung, TW;
Yu-Shiang Huang, New Taipei, TW;
Chien-Te Tu, Taipei, TW;
Chee-Wee Liu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A device comprises source/drain regions over a substrate and spaced apart along a first direction, a first gate structure between the source/drain regions, and a first channel structure surrounded by the first gate structure. The first channel structure comprises alternately stacking first semiconductor layers and second semiconductor layers. When viewed in a cross section taken along a second direction perpendicular to the first direction, central axes of the second semiconductor layers are laterally offset from central axes of the first semiconductor layers.