The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Apr. 16, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Chung-En Tsai, Hsinchu County, TW;
Chia-Che Chung, Hsinchu, TW;
Chee-Wee Liu, Taipei, TW;
Fang-Liang Lu, New Taipei, TW;
Yu-Shiang Huang, New Taipei, TW;
Hung-Yu Yeh, Taichung, TW;
Chien-Te Tu, Taipei, TW;
Yi-Chun Liu, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
The present disclosure generally relates to a gate-all-around (GAA) transistor. The GAA transistor may include regrown source/drain layers in source/drain stressors. Atomic ratio differences among the regrown source/drain layers are tuned to reduce strain mismatch among the semiconductor nanosheets. Alternatively, the GAA transistor may include strained channels formed using a layer stack of alternating semiconductor layers having different lattice constants.