Yu-Shen Shih

Title: Innovations by Inventor Yu-Shen Shih

Introduction: Yu-Shen Shih is a notable inventor based in Hemei, Taiwan. With a wealth of knowledge in semiconductor technology, he has contributed significantly to the field through his innovative patents. Yu-Shen Shih holds two patents that showcase his expertise in enhancing photodiode performance.

Latest Patents: Yu-Shen Shih's most recent patents include a method for increasing photodiode full well capacity and an implanting method for forming a photodiode. The method for increasing photodiode full well capacity details a backside illuminated CMOS image sensor with an extended photo active region and an isolation region, designed to improve quantum efficiency by enhancing photon conversion to electrons. His implanting method allows for the formation of a photodiode by providing a substrate with a first conductivity and growing an epitaxial layer on it. This method results in a significant difference in average doping densities between the photo active and inactive regions, further optimizing photodiode performance.

Career Highlights: Yu-Shen Shih has made impactful strides in his career at Taiwan Semiconductor Manufacturing Company Limited (TSMC). His inventive contributions have played a pivotal role in advancing semiconductor technologies, particularly in photodetection systems.

Collaborations: Throughout his journey, Yu-Shen Shih has collaborated with industry professionals, including his coworkers Ching-Hwanq Su and Chih-Cherng Jeng. These collaborations have fostered an environment of innovation and helped refine his patented techniques for semiconductor applications.

Conclusion: Yu-Shen Shih stands out as a prominent inventor in the realm of semiconductor technology. His contributions through patents significantly enhance the efficiency of photodiodes. As the industry evolves, his inventions will likely continue to impact future advancements in imaging sensors and photonic devices.