The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Mar. 01, 2012
Yu-shen Shih, Hemei Township, TW;
Ching-hwanq Su, Tainan, TW;
Wei-ming You, Taipei, TW;
Chih-cherng Jeng, Madou Township, TW;
Kuo-cheng Lee, Tainan, TW;
Yen-hsung Ho, Zhongli, TW;
Yu-Shen Shih, Hemei Township, TW;
Ching-Hwanq Su, Tainan, TW;
Wei-Ming You, Taipei, TW;
Chih-Cherng Jeng, Madou Township, TW;
Kuo-Cheng Lee, Tainan, TW;
Yen-Hsung Ho, Zhongli, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.