Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Shen Shih

Ching-Hwanq Su

Chih-Cherng Jeng

Kuo-Cheng Lee

Jung-Chi Jeng

Wei-Ming You

Chih-Kang Chao

Yen-Hsung Ho

Yan-Hua Lin

A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Method for increasing photodiode full well capacity

An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

Implanting method for forming photodiode

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Hemei, Taiwan

Yu-Shen Shih